SH8J62TB1 datasheet
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
О ДАТАШИТЕ
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МаркировкаSH8J62TB1
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ПроизводительRohm
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ОписаниеRohm SH8J62TB1 Continuous Drain Current: 4.5 A Current - Continuous Drain (id) @ 25?° C: 4.5A Drain To Source Voltage (vdss): 30V Drain-source Breakdown Voltage: - 30 V Fet Feature: Logic Level Gate Fet Type: 2 P-Channel (Dual) Forward Transconductance Gfs (max / Min): 3.5 S Gate Charge (qg) @ Vgs: 8nC @ 5V Input Capacitance (ciss) @ Vds: 800pF @ 10V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOP Power - Max: 2W Power Dissipation: 2 W Rds On (max) @ Id, Vgs: 56 mOhm @ 4.5A, 10V Resistance Drain-source Rds (on): 60 mOhms Series: - Transistor Polarity: P-Channel Vgs(th) (max) @ Id: 2.5V @ 1mA Other Names: SH8J62TB1TR
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Количество страниц6 шт.
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Форматы файлаHTML, PDF
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